C35 GTO緩沖吸收電容器
型號(hào) | 規(guī)格 | 價(jià)格(元) | 尺寸(mm) | 引出 |
C35 | 0.47vF/5000V | 50 | Φ53*L50 | M6 |
價(jià)格僅供參考,以報(bào)價(jià)單為準(zhǔn)。主要應(yīng)用/Application廣泛應(yīng)用于GTO緩沖吸收以及大電流,高壓場(chǎng)合。Widely used in GTO snubber,high current and high voltage application. 產(chǎn)品特點(diǎn)/Characteristics電介質(zhì):聚丙烯薄膜結(jié)構(gòu):金屬化膜內(nèi)串結(jié)構(gòu)封裝:外包阻燃邁拉膠帶,阻燃(94V-0級(jí))環(huán)氧封裝引出: M6或M8銅螺母引出能承受大電流,高電壓低損耗、高穩(wěn)定具有自愈性Dielectric:Polypropylene filmConstruction:me
talized film internal series connectionCoating:Polyester tape wrapping with resin sealing.Flame retardant execution(UL94V-0)Terminals:Copper nut leads,threaded insert M5,M6 or M8High current,high voltageLow losses,high stabilitySelf healing 技術(shù)性能/Specifications
引用標(biāo)準(zhǔn)/Reference standards | GB/T 17702 IEC 61071 |
工作溫度范圍/Operating temperature range | -40℃~85℃ |
容量范圍/Capacitance | 0.33μF~3.0μF |
額定電壓/Rated Voltage | 4000Vdc~10 000Vdc |
容量偏差/Tolerance | ±5% ±10% |
極間耐電壓/Test voltage between terminals | 1.5Ur(Vdc)10s 25℃±5℃ |
極殼耐電壓/Test voltage between terminals and case | 3000V 50Hz 60s,25℃±5℃ |
損耗角正切/Dissipation factor | tgδ≤8×10-4 at 25℃±5℃,1kHz |
絕緣電阻/Insulation resistance | C×R≥30000s,at 100Vdc,25℃±5℃,60s |
預(yù)期壽命/Life expectancy | 200000h at Ur and 70℃ |
此產(chǎn)品關(guān)鍵字:IGBT吸收電容、IGBTSNUBBER、IGBT吸收電容廠家、IGBT吸收電容價(jià)格 華裕電容-高品質(zhì)金屬化薄膜電容專業(yè)制造商全國(guó)免費(fèi)咨詢熱線:400-850-5811銷售熱線(直線):020-87022531 020-87022473傳真:02087022531 02087023473手機(jī):18665682511http://www.hy-el.com http://www.gdhyel.com